A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
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چکیده
منابع مشابه
A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which...
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In this work, both the static and dynamic behaviors as well as the signal read-out circuits of ISFETs were studied. The standard NMOS structure in conjunction with the insulator-electrolyte capacitor was used to model the ISFET under study. The site-binding theory was incorporated to describe the chemistry occurring at the insulator/electrolyte interface. The mechanism of the threshold voltage ...
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ژورنال
عنوان ژورنال: Sensors
سال: 2010
ISSN: 1424-8220
DOI: 10.3390/s100504643